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PTFA082201E PTFA082201F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 - 894 MHz
Description
The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in the 869 to 894 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA082201E Package H-36260-2
PTFA082201F Package H-37260-2
2-Carrier WCDMA Performance
VDD = 30 V, IDQ = 1950 mA, = 894 MHz, 3GPP WCDMA signal, P/A R = 8.1 dB, 10 MHz carrier spacing, 3.84 MHz bandwidth
50 40 30 20 10 0 30 35 40 45 50 -30 -35 -40 -45
Features
* * *
IMD (dBc), ACPR (dBc)
Thermally-enhanced packages, Pb-free and RoHS compliant Broadband internal matching Typical two-carrier WCDMA performance at 894 MHz, 30 V - Average output power = 55 W - Linear Gain = 18.0 dB - Efficiency = 30% - Intermodulation distortion = -37 dBc - Adjacent channel power = -39.5 dBc Typical CW performance, 894 MHz, 30 V - Output power at P-1dB = 250 W - Efficiency = 59% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR at 30 V, 220 W (CW) output power
Drain Efficiency (%)
ACPR
IMD
*
Gain Efficiency
-50 -55
* * *
Output Power, Avg. (dBm)
RF Characteristics
Two-carrier WCDMA Measurements (not subject to production test--verified by design/characterization in Infineon test fixture)
VDD = 30 V, IDQ = 1950 mA, POUT = 55 W average 1 = 884 MHz, 2 = 894 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.1 dB @ 0.01% CCDF
Characteristic
Gain Drain Efficiency Intermodulation Distortion
Symbol
Gps
Min
-- -- --
Typ
18.0 30 -37
Max
-- -- --
Unit
dB % dBc
D
IMD
All published data at TCASE = 25C unless otherwise indicated ESD: Electrostatic discharge sensitive device--observe handling precautions! Data Sheet 1 of 10
*See Infineon distributor for future availability.
Rev. 04.1, 2009-02-20
PTFA082201E PTFA082201F
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 30 V, IDQ = 1950 mA, POUT = 220 W PEP, = 894 MHz, tone spacing = 1 MHz
Characteristic
Gain Drain Efficiency Intermodulation Distortion
Symbol
Gps
Min
17.5 40 --
Typ
18.0 43 --
Max
-- -- -29
Unit
dB % dBc
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage Drain Leakage Current
Conditions
VGS = 0 V, IDS = 10 mA VDS = 28 V, V GS = 0 V VDS = 63 V, V GS = 0 V
Symbol
V(BR)DSS IDSS IDSS RDS(on) VGS IGSS
Min
65 -- -- -- 2.0 --
Typ
-- -- -- 0.04 2.5 --
Max
-- 1.0 10.0 -- 3.0 1.0
Unit
V A A V A
On-State Resistance Operating Gate Voltage Gate Leakage Current
VGS = 10 V, V DS = 0.1 V VDS = 30 V, IDQ = 1950 mA VGS = 10 V, V DS = 0 V
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C, 220 W CW) TSTG RJC
Symbol
VDSS VGS TJ PD
Value
65 -0.5 to +12 200 700 4.0 -40 to +150 0.25
Unit
V V C W W/C C C/W
Ordering Information
Type and Version PTFA082201E PTFA082201F V4 V4 Package Outline H-36260-2 H-37260-2 Package Description Thermally-enhanced slotted flange, single-ended Shipping Tray Tray Marking PTFA082201E PTFA082201F
Thermally-enhanced earless flange, single-ended *See Infineon distributor for future availability. Data Sheet 2 of 10
Rev. 04.1, 2009-02-20
PTFA082201E PTFA082201F
Confidential, Limited Internal Distribution
Typical Performance (data taken in a production test fixture)
2-Carrier WCDMA Performance
VDD = 30 V, IDQ = 1950 mA, = 894 MHz, 3GPP WCDMA signal, P/A R = 8.1 dB, 10 MHz carrier spacing, 3.84 MHz bandwidth
50 -30 -35
Two-carrier WCDMA Power Sweep
VDD = 30 V, IDQ = 1600 mA, 1 = 889 MHz, 2 = 894
0
35
Efficiency (%), Gain (dB)
30 20 10
-40 -45 -50
ACPR (dBc)
Gain
IMD
Efficiency
-20 -30 -40 -50 -60 0 10 20 30 40 50
25 20
ACPR
15 10 5
ACPR
0 30 35 40 45 50 -55
Output Power (dBm)
Output Power (dBm)
Gain & Efficiency vs. Output Power
VDD = 30 V, IDQ = 1950 mA, = 894 MHz
2-Tone Broadband Performance
VDD = 30 V, IDQ = 1950 mA, POUT = 110 W
22 21 20
70
50
0 -5 -10
Efficiency (%), Gain (dB)
60
45 40 35 30 25 20 15 850
Drain Efficiency (%)
Gain (dB)
19 18 17 16 15 30
Gain
40 30 20
Return Loss
-15 -20 -25
Efficiency
10 0
Gain
865 880 895
35
40
45
50
55
60
-30 910
Output Power (dBm)
Frequency (MHz)
Data Sheet
3 of 10
Rev. 04.1, 2009-02-20
Return Loss (dB)
50
Efficiency
Drain Efficiency (%)
40
IMD (dBc), ACPR (dBc)
TCASE = 25C TCASE = 90C
-10
Efficiency
30
PTFA082201E PTFA082201F
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Power Sweep
VDD = 30 V, = 894 MHz, series show IDQ
20
-20 -30
Intermodulation Distortion vs. Output Power
VDD = 30 V, IDQ = 1950 mA, 1 = 893, 2 = 894 MHz
Power Gain (dB)
2400 mA
19
1950 mA
18
IMD (dBc)
-40 -50 -60 -70
3rd Order 5th
1600 mA
7th
17 30 35 40 45 50 55
-80 30 35 40 45 50 55
Output Power (dBm)
Output Power, PEP (dBm)
Output Power vs. Drain Voltage
IDQ = 1950 mA, = 960 MHz
IS-95 CDMA Performance
VDD = 30 V, IDQ = 1950 mA, = 894 MHz
54
40
-40
30
-50
53
20
-60
Efficiency
10 -70
Alt1 1.98 MHz
52 24 26 28 30 32 34 36
0 25 30 35 40 45 50 -80
Drain Voltage (V)
Output Power, Avg. (dBm)
Data Sheet
4 of 10
Rev. 04.1, 2009-02-20
Adj. Ch. Power Ratio (dBc)
Adj 750 kHz
Output Power (dBm)
Drain Efficiency (%)
PTFA082201E PTFA082201F
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage, series show current
1.03 0.44 A 1.32 A 2.20 A 3.30 A 6.61 A 9.91 A 13.22 A 16.52 A
Normalized Bias Voltage (V)
1.02 1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20 0 20 40 60 80
100
Case Temperature (C)
Broadband Circuit Impedance
GEN
D
G S
- WAVE LE NGTH
Z Load
0.0
D LOAD S TOW AR NGT H
Frequency
MHz 850 870 890 910 930 R
Z Source
jX -1.910 -1.624 -1.360 -1.147 -0.896 1.792 1.764 1.737 1.693 1.703
Z Load
R 1.999 1.963 1.924 1.854 1.853 jX -0.196 0.165 0.485 0.793 1.087
Z Source
0.1
930 MHz 850 MHz
Data Sheet
5 of 10
EL E WAV
Rev. 04.1, 2009-02-20
0.1
0. 1
Z Source
Z Load
S T OW A RD
Z0 = 50
930 MHz 850 MHz
PTFA082201E PTFA082201F
Confidential, Limited Internal Distribution
Reference Circuit
C1 0.001F R2 1.3K V R1 1.2K V
QQ1 LM7805 VDD
Q1 BCP56 C2 0.001F R3 2K V C3 0.001F R4 2K V R5 10 V C4 10F 35V
R6 5.1K V C5 0.1F R7 5.1KV C6 1F C7 33pF C11 33pF C12 1F C13 10F 50V
L1 VDD l6 R8 10 V l7 C23 3.3pF l9 l10 l11 C24 3.3pF L2
a082201ef_bd_12-14-07
C14 100F 50V
C15 0.1F
C16 10F 50V
C8 33pF
DUT l2 l3 C9 3.9pF l4 l5 C10 8.2pF
C25 33pF l12 l13
RF_IN
l1
RF_OUT
l8
C17 33pF
C18 1F
C19 10F 50V
C20 100F 50V
C21 0.1F
C22 10F 50V
Reference circuit schematic for = 894 MHz
Circuit Assembly Information
DUT PCB PTFA082201E or PTFA082201F 0.76 mm [.030"] thick, r = 3.48 LDMOS Transistor Rogers RO4350 1 oz. copper
Microstrip
Electrical Characteristics at 894 MHz1
0.065 0.049 0.024 0.083 0.027 0.190 0.183 0.095 0.031 0.077 0.025 0.028 , 50.0 , 38.0 , 38.0 , 7.8 , 7.8 , 78.0 , 60.0 , 8.4 , 8.4 / 11.2 , 11.2 / 37.0 , 37.0 , 50.0
Dimensions: L x W ( mm) Dimensions: L x W (in.)
13.13 x 1.60 9.78 x 2.54 4.83 x 2.54 15.44 x 17.83 4.95 x 17.83 40.64 x 0.74 37.54 x 1.24 17.68 x 16.48 5.94 x 16.48 / 11.91 14.53 x 11.91 / 2.64 4.98 x 2.64 5.74 x 1.60 6 of 10 0.517 0.385 0.190 0.608 0.195 1.600 1.478 0.696 0.234 0.572 0.196 0.226 x 0.063 x 0.100 x 0.100 x 0.702 x 0.702 x 0.029 x 0.049 x 0.649 x 0.649 / 0.469 x 0.469 / 0.104 x 0.104 x 0.063
l1 l2 l3 l4 l5 l6 l7, l8 l9 l10 (taper) l11 (taper) l12 l13
Data Sheet
1Electrical characteristics are rounded.
Rev. 04.1, 2009-02-20
PTFA082201E PTFA082201F
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
RO4350_.030 R5 R4 C4 C5 C6 QQ1 C3 C1 RO4350_.030
VDD
C11
C16
VDD
L1 C14 C13 C15
R3 C2 R7 R1 R2 R6 C7 R8
LM
Q1
C12
C23
RF_IN
C8 C9 C24
C25
RF_OUT
C10 C17
C19 C18 C20 L2 C22
C21
VDD
A082201in_02
A092201in_02
A082201out_02
A092201out_02
a082201ef _assy
Reference circuit assembly diagram (not to scale)*
Component
C1, C2, C3 C4 C5, C15, C21 C6, C12, C18 C7, C8, C11, C17, C25 C9 C10 C13, C16, C19, C22 C14, C20 C23, C24 L1, L2 Q1 QQ1 R1 R2 R3 R4 R5, R8 R6, R7
Description
Capacitor, 0.001 F Tantalum capacitor, 10 F, 35 V Capacitor, 0.1 F Capacitor, 1 F Ceramic capacitor, 33 pF Ceramic capacitor, 3.9 pF Ceramic capacitor, 8.2 pF Tantalum capacitor, 10 F, 50 V Electrolytic capacitor, 100 F, 50 V Ceramic capacitor, 3.3 pF Ferrite, 8.9 mm Transistor Voltage regulator Chip resistor 1.2 k-ohms Chip resistor 1.3 k-ohms Chip resistor 2 k-ohms Potentiometer 2 k-ohms Chip resistor 10 ohms Chip resistor 5.1 k-ohms
Suggested Manufacturer
Digi-Key Digi-Key Digi-Key ATC ATC ATC ATC Garrett Electronics Digi-Key ATC Elna Magnetics Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key
P/N or Comment
PCC1772CT-ND 399-1655-2-ND PCC104BCT-ND 920C105 100B 330 100B 3R9 100B 8R2 TPSE106K050R0400 P5182-ND 100B 3R3 BDS 4.6/3/8.9-4S2 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KECT-ND 3224W-202ETR-ND P10ECT-ND P5.1KECT-ND
*Gerber Files for this circuit available on request Data Sheet 7 of 10 Rev. 04.1, 2009-02-20
PTFA082201E PTFA082201F
Confidential, Limited Internal Distribution
Package Outline Specifications Package H-36260-2
45 X 2.03 [.080]
2X 12.70 [.500] C L
4X R 1.52 [R.060]
4.830.50 [.190.020]
D S
LID 13.21 -0.15 [.520 +.004] -.006
+0.10
C L
FLANGE 13.72 [.540] 23.370.51 [.920.020] 2X R1.63 [R.064]
G
27.94 [1.100]
SPH 1.57 [.062]
22.350.23 [.880.009] C L 4.110.38 [.162.015] 0.0381 [.0015] -A34.04 [1.340]
h -36+ 37260-2_36260 / 04-25-08
1.02 [.040]
Diagram Notes--unless otherwise specified: 1. 2. 3. 4. 5. 6. Lead thickness: 0.10 +0.051/-0.025 [.004 +.002/-.001]. All tolerances 0.127 [.005] unless specified otherwise. Pins: D = drain, S = source, G = gate. Interpret dimensions and tolerances per ASME Y14.5M-1994. Primary dimensions are mm. Alternate dimensions are inches. Gold plating thickness: S, D, G - flange & leads: 1.14 0.38 micron [45 15 microinch]
Data Sheet
8 of 10
Rev. 04.1, 2009-02-20
PTFA082201E PTFA082201F
Confidential, Limited Internal Distribution
Package Outline Specifications (cont.) Package H-37260-2
45 X 2.031 [.080]
2X 12.70 [.500] C L
D
4.830.50 [.190.020]
13.72 [.540]
LID 13.21 +0.10
-0.15 [.520 +.004 ] -.006
C L 23.370.51 [.920.020]
G
4X R0.508 -0.127 [R.020 +.015 ]
-.005
+0.381
LID 22.350.23 [.880.009]
4.110.38 [.162.015]
0.0381 [.0015]
1.02 [.040]
-Ah-36+37260-2_37260/ 4-25-08 0
S
FLANGE 23.11 [.910]
SPH 1.57 [.062]
Diagram Notes--unless otherwise specified: 1. 2. 3. 4. 5. 6. Lead thickness: 0.10 +0.051/-0.025 [.004 +.002/-.001]. All tolerances 0.127 [.005] unless specified otherwise. Pins: D = drain, S = source, G = gate. Interpret dimensions and tolerances per ASME Y14.5M-1994. Primary dimensions are mm. Alternate dimensions are inches. Gold plating thickness: S, D, G - flange & leads: 1.14 0.38 micron [45 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower
Data Sheet
9 of 10
Rev. 04.1, 2009-02-20
PTFA082201E/F V4 Confidential, Limited Internal Distribution Revision History: 2009-02-20 2008-07-08 and 2007-12-13, Data Sheets Previous Version: Page Subjects (major changes since last revision) 1, 2, 9, 10 Update product to V4, with new package technologies. Updated package outline diagrams. 1-4 7 7 Update RF characteristics. Revise block diagram. Fixed typing error
Data Sheet
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International
GOLDMOS(R) is a registered trademark of Infineon Technologies AG.
Edition 2009-02-20 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 10 of 10 Rev. 04.1, 2009-02-20

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